a,dec,2010 to ? 92 1.emitter 2.collector 3.base to-92 plastic-encapsulate transistors KTA1271 transistor (pnp) features z high dc current gain z complementary to ktc3203 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = -0.1ma ,i e =0 -35 v collector-emitter breakdown voltage v (br) ceo i c =-10ma,i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-0.1ma,i c =0 -5 v collector cut-off current i cbo v cb =-35v,i e =0 -0.1 a collector cut-off current i ceo v ce =-25v,i b =0 -0.2 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.1 a h fe(1) v ce =-1v, i c =-100ma 100 320 dc current gain h fe(2) v ce =-1v, i c =-700ma 35 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-20ma -0.7 v base-emitter voltage v be v ce =-1v, i c =-10ma -0.8 v transition frequency f t v ce =-5v,i c =-10ma 120 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 19 pf classification of h fe(1) ran k oy range 100-200 160-320 symbo parameter value unit v cbo collector-base voltage -35 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -0.8 a p c collector power dissipation 0.625 w r ja thermal resistance from junction to ambient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 tiger electronic co.,ltd
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